2 July 1994 Evidence of subnanosecond transition stage in S-N current switching of YBaCuO films
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Proceedings Volume 2160, Superconductive Devices and Circuits; (1994) https://doi.org/10.1117/12.180991
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
We report on a study of S-N and N-S current switching in high quality YBaCuO films deposited onto ZrO2 and NdGaO3 substrates. The films 60-120 nm thick prepared by laser ablation were structured into single strips and were provided with gold contacts. We monitored the time dependence of the resistance upon application of the voltage step on the film. Experiment performed within certain ranges of voltage amplitudes and temperatures showed the occurrence of the fast stage both in S-N (shorter than 300 ps) and N-S transition. We discuss the mechanism of switching taking into account the hot electron phenomena in YBaCuO. The contributions of various thermal processes in the subsequent stage of the resistance dynamic are also discussed. The basic limiting characteristics (average dissipated power, minimum work done for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Boris S. Karasik, Boris S. Karasik, Michael A. Zorin, Michael A. Zorin, Irina I. Milostnaya, Irina I. Milostnaya, Andrei I. Elantev, Andrei I. Elantev, Gregory N. Gol'tsman, Gregory N. Gol'tsman, Eugeni M. Gershenzon, Eugeni M. Gershenzon, } "Evidence of subnanosecond transition stage in S-N current switching of YBaCuO films", Proc. SPIE 2160, Superconductive Devices and Circuits, (2 July 1994); doi: 10.1117/12.180991; https://doi.org/10.1117/12.180991

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