31 December 1993 Immersed photodiodes for IR range from 8 to 14 um
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Proceedings Volume 2161, CIS Selected Papers: Photometry; (1993) https://doi.org/10.1117/12.166361
Event: Photometry: Selected Papers from the 8th and 9th CIS Conferences, 1992, Moscow, Russian Federation
Abstract
The immersion lens (IL) influence on detecting ability D(lambda) * of CdxHg1-xTe photodiodes designed for the IR range from 8 to 14 micrometers is considered. Theoretical dependencies of D(lambda) * and the threshold temperature difference (Delta) Tt of the IR imaging system on the limit wavelength (lambda) co immersion photodiodes (IPh) are given. Affecting both a signal and noise of photodiodes the immersion increases their D(lambda) *. IR imaging systems with IPh become not so critical to the choice of (lambda) .
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valery I. Turinov, "Immersed photodiodes for IR range from 8 to 14 um", Proc. SPIE 2161, CIS Selected Papers: Photometry, (31 December 1993); doi: 10.1117/12.166361; https://doi.org/10.1117/12.166361
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