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7 May 1980 Fabrication And Evaluation Of A Monolithic InSb CID
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Proceedings Volume 0217, Advances in Focal Plane Technology; (1980)
Event: 1980 Los Angeles Technical Symposium, 1980, Los Angeles, United States
The fabrication of a monolithic indium-antimonide 32 x 32 CID array applicable for staring infrared imaging sensors is presented with preliminary characterization results. The basic MIS technology utilizes low-temperature CVD to deposit insulating layers of nitrogen-doped Si02 on bulk indium-antimonide substrates. A two-level insulator/two-level metal structure results in a simple four-mask process flow for the CID array. Completed arrays demonstrate acceptable dark currents that result in 20 ms storage times at 77K and are completely photocurrent dominated for typical tactical background photon flux densities in the 1015 to 1016 photons/cm2s range. Charge transfer experiments indicate acceptable transfer efficiencies for CID operation. Plans to demonstrate thermal imagery are presented.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David N. Pocock, Ichiro Kasai, David E. Nuttall, Chih-Hong Chen, and Robert N. Ting "Fabrication And Evaluation Of A Monolithic InSb CID", Proc. SPIE 0217, Advances in Focal Plane Technology, (7 May 1980);


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