Metal Insulated Semiconductor (MIS) Radiation Effects Considerations For Infrared Focal-Plane Arrays

J. M. Killiany; N. S. Saks

doi:10.1117/12.958493

7 May 1980 Metal Insulated Semiconductor (MIS) Radiation Effects Considerations For Infrared Focal-Plane Arrays

J. M. Killiany, N. S. Saks

Proceedings Volume 0217, Advances in Focal Plane Technology; (1980) https://doi.org/10.1117/12.958493
Event: 1980 Los Angeles Technical Symposium, 1980, Los Angeles, United States

Abstract

Flatband voltage shifts on ther order of -2 volts/10⁴ rad (Si) are observed for all MOS devices with 1000 R thick oxides irradiated at temperatures below 100°K. For example, the radiation hardness of "process optimized" oxides, which are radiation hard at room temperature with threshold shifts of -1V/10⁶ rad (Si) for 1000 Å oxides, is degraded by two orders of magnitude when irradiated below 100°K. Flatband voltage shifts as small as0-1 volt per 10⁶ rad (Si) have been measured on thin oxide MNOS capacitors irradiated at 80 K. The threshold shift in a p-buried channel CCD linear shift register, fabricated with an oxide/ nitride dual gate insulator and double-level polysilicon gates and irradiated with the device operating, was -1 volt after 10° rad (Si) dose at 80°K. The CCDs were operational using the preirradiation bias conditions after 10° rad (Si) at 80°K, and the CCD transfer efficiency was essentially unchanged at 0.9999.

Citation Download Citation

J. M. Killiany and N. S. Saks "Metal Insulated Semiconductor (MIS) Radiation Effects Considerations For Infrared Focal-Plane Arrays", Proc. SPIE 0217, Advances in Focal Plane Technology, (7 May 1980); https://doi.org/10.1117/12.958493

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