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7 May 1980 Monolithic HgCdTe Focal Plane Array Structures
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Proceedings Volume 0217, Advances in Focal Plane Technology; (1980) https://doi.org/10.1117/12.958475
Event: 1980 Los Angeles Technical Symposium, 1980, Los Angeles, United States
Abstract
Sophisticated infrared imaging systems require complex focal plane device structures to perform the basic functions of (1) detection, (2) time-delay-and-integration (TDI), (3) multiplexing, and possibly (4) scanning in large array formats with minimal on-focal-plane power dissipation. Monolithic HgCdTe charge transfer device structures are promising candidates for many focal plane requirements. Charge coupled devices (CCDs) are the natural structure for scanning system focal pl.nes which utili:e TN. Charge injection devices (CID's) are directly applicable to staring system focal plane requirements. This paper discusses the applicability and design considerations of various devices which have been developed using this technology.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. G. Roberts, S R . Borrello, and R. A. Chapman "Monolithic HgCdTe Focal Plane Array Structures", Proc. SPIE 0217, Advances in Focal Plane Technology, (7 May 1980); https://doi.org/10.1117/12.958475
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