1 May 1994 4Kx2K pixel three-side buttable CCD imager design and fabrication
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Abstract
A 4096 X 2048-pixel three-side buttable scientific CCD imager was designed and fabricated for use in electronic imaging applications that require mosaics of many closely spaced large area CCDs that have good low-light-level performance. The three-side buttable CCD design, which allows 8192 X (N X 2048) pixel mosaicking, was fabricated using a custom three-level polyscientific CCD process. The CCD has 15 micron square pixels and employs a full-frame MPP mode device architecture with a single split serial shift register and two on-chip amplifiers. Excellent performance characteristics were demonstrated, including less than 5 electron noise at a 50 kHz output data rate, charge transfer efficiency greater than 0.999997, and an exceptionally low density of small signal charge traps at the characterization temperature. The on-chip CCD amplifier high-frequency operation was characterized separately and the amplifier was found to support a 5-MHz output data rate corresponding to a readout cycle of 0.84 seconds for higher frame rate applications.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul P. Suni, Victor Tsai, Peter Vutz, "4Kx2K pixel three-side buttable CCD imager design and fabrication", Proc. SPIE 2172, Charge-Coupled Devices and Solid State Optical Sensors IV, (1 May 1994); doi: 10.1117/12.172763; https://doi.org/10.1117/12.172763
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KEYWORDS
Charge-coupled devices

Amplifiers

Imaging systems

Observatories

Quantum efficiency

Astronomy

Semiconducting wafers

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