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1 May 1994 Characterization and modeling of CCD devices on high-resistivity silicon substrates
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Proceedings Volume 2172, Charge-Coupled Devices and Solid State Optical Sensors IV; (1994) https://doi.org/10.1117/12.172768
Event: IS&T/SPIE 1994 International Symposium on Electronic Imaging: Science and Technology, 1994, San Jose, CA, United States
Abstract
CCD devices fabricated on low-resistivity silicon epi (30 - 60 (Omega) -cm) exhibit satisfactory imaging characteristics in the visible spectrum but inferior imaging characteristics in the near infrared and x ray regions. This is a result of the greater penetration depth of the photons, which tend to travel beyond the depletion regions under the CCD gates causing optical crosstalk and poor responsivity. This represents a performance limiting issue for acousto-optical applications and scientific imaging. CCD devices fabricated on high-resistivity silicon epi (>= 1000 (Omega) -cm) with increased epi layer thickness will exhibit superior imaging performance for near-infrared and x-ray photons. This is because the width of the depletion regions is much greater compared to devices on conventional substrates. DALSA has fabricated CCD structures on high-resistivity substrates and has examined their performance, in particular imaging behavior in the near-infrared region of the spectrum. We also examine the behavior of the nonimaging circuitry associated with the CCD such as the output amplifiers.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stacy R. Kamasz, Michael G. Farrier, and Charles R. Smith "Characterization and modeling of CCD devices on high-resistivity silicon substrates", Proc. SPIE 2172, Charge-Coupled Devices and Solid State Optical Sensors IV, (1 May 1994); https://doi.org/10.1117/12.172768
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