A novel arrangement of gates on front-side-illuminated CCDs can leave up to 50% of the active detector area open to the epitaxial layer, allowing for enhanced response in the near UV spectral region. Important physical and operating properties and parameters (quantum efficiency and charge transfer efficiency) of two variations of the basic device are described.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William V. Schempp, William V. Schempp, "Lattice-gate CCDs", Proc. SPIE 2172, Charge-Coupled Devices and Solid State Optical Sensors IV, (1 May 1994); doi: 10.1117/12.172764; https://doi.org/10.1117/12.172764

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