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1 May 1994 Progress in CMOS active pixel image sensors
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Proceedings Volume 2172, Charge-Coupled Devices and Solid State Optical Sensors IV; (1994)
Event: IS&T/SPIE 1994 International Symposium on Electronic Imaging: Science and Technology, 1994, San Jose, CA, United States
Recent research results regarding the investigation of CMOS active pixel image sensors (APS) are reported. An investigation of various designs for the pixel, including photogate devices of various geometries and photodiode devices, has been performed. Optoelectronic performance including intrapixel photoresponse maps taken using a focused laser scanning apparatus are presented. Several imaging arrays have also been investigated. A 128 X 128 image sensor has been fabricated and characterized. Both p-well and n-well implementations have been explored. The demonstrated arrays use 2 micrometers CMOS design rules and have a 40 X 40 micrometers pixel pitch. Typical design fill-factor is 26%. Output sensitivity is 3.7 (mu) V/e- for the p-well devices and 6.5 (mu) V/e- for the n-well devices. Read noise is less than 40 e- rms for the baseline designs. Dynamic range has been measured to be over 71 dB using a 5 V supply voltage. The arrays are random access with TTL control signals. Results regarding on-chip suppression of fixed pattern noise also are presented.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sunetra K. Mendis, Sabrina E. Kemeny, Russell C. Gee, Bedabrata Pain, Quiesup Kim, and Eric R. Fossum "Progress in CMOS active pixel image sensors", Proc. SPIE 2172, Charge-Coupled Devices and Solid State Optical Sensors IV, (1 May 1994);


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