Paper
1 May 1994 Femtosecond switching of the solid state phase transition in the smart-system material VO2
Michael F. Becker, A. Bruce Buckman, Rodger M. Walser, Thierry Lepine, Patrick M. Georges, Alain Brun
Author Affiliations +
Abstract
We have measured the optical response speed of the semiconductor to metal phase transition in VO2 films for excitation with femtosecond laser pulses at 780 nm wavelength. By probing at a wavelength of 780 nm on a time scale from 0 to 0.5 ns and at 633 nm for longer times, we have determined the dynamic response of the complex refractive index and the complex permittivity as determined from transmission and reflection measurements. The phase transition was found to be largely prompt with the final high-temperature metallic state reached in less than 5 ps.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael F. Becker, A. Bruce Buckman, Rodger M. Walser, Thierry Lepine, Patrick M. Georges, and Alain Brun "Femtosecond switching of the solid state phase transition in the smart-system material VO2", Proc. SPIE 2189, Smart Structures and Materials 1994: Smart Materials, (1 May 1994); https://doi.org/10.1117/12.174076
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Cited by 8 scholarly publications.
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KEYWORDS
Picosecond phenomena

Reflection

Femtosecond phenomena

Semiconductors

Transition metals

Refractive index

Absorption

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