Alignment accuracy improvement by consideration of wafer processing impacts

Klaus Simon; H.-U. Scheunemann; Hans L. Huber; P. Kaiser

doi:10.1117/12.175826

13 May 1994 Alignment accuracy improvement by consideration of wafer processing impacts

Klaus Simon, H.-U. Scheunemann, Hans L. Huber, P. Kaiser

Proceedings Volume 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV; (1994) https://doi.org/10.1117/12.175826
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

To further improve the performance of alignment systems for high resolution lithographic exposure systems, the various contributions to the overall alignment accuracy must be identified and separately reduced. We have measured the contributions to the performance of the ALX100 alignment system of the SUSS XRS200 x-ray stepper emerging from recognition repeatability, focus setting, and gap setting. We have found asymmetric alignment profiles during the alignment of a metal-layer process wafer combined with stepfield dependent offsets. After modification of the signal evaluation the stepfield dependent offset was largely reduced and the performance increased.

Citation Download Citation

Klaus Simon, H.-U. Scheunemann, Hans L. Huber, and P. Kaiser "Alignment accuracy improvement by consideration of wafer processing impacts", Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994); https://doi.org/10.1117/12.175826

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