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13 May 1994 Chemically amplified negative resist for e-beam fabrication of x-ray masks
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Abstract
We are reporting on a chemically amplified negative-tone resist developed at IBM. The resist consists of three components: novolac resin, photoacid generator, and crosslinker. The resist is sensitive to DUV, e-beam, and x ray. However, this paper focuses on the e-beam application oriented toward x-ray mask fabrication. The mask process includes post-apply and post-exposure bake of membranes in a convention oven. The exposure was completed in an IBM EL-3+ system equipped with a variable axis immersion lens (VAIL). The membranes were developed in an APT processor with 0.03 N TMAH employing an interrupt develop process. The resist sensitivity ranged from 5 to 10 (mu) C/cm2 depending on the resist formulation and the process parameters. The contrast was found to be greater than 5.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ahmad D. Katnani, Janet M. Rocque, Ranee W. Kwong, Denise M. Puisto, and Donald K. Bailey "Chemically amplified negative resist for e-beam fabrication of x-ray masks", Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994); https://doi.org/10.1117/12.175821
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