13 May 1994 Dry-etch characteristics of chemically amplified and onium-salt-sensitized electron-beam resists
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Abstract
Electron beam resists having high sensitivity and high resistance to dry etching are under investigation for sub-half micron device production using 5x reticle masks. The effects of dry etch process conditions on the performance of the novolac based chemically amplified AZPN114 and onium salt sensitized EPR resist have been investigated at 20 keV and 10 keV electron beam energies using an electron beam microfabricator under a range of dose, post- exposure bake, and development conditions. Linewidths in the range from 4 micrometers down to 0.2 micrometers have been evaluated. Pattern transfer to chromium on quartz was carried out in a commercial reactive ion etcher. A comprehensive series of RIE experiments were devised and analyzed using a commercial statistical software package. CD measurements on resist lines and also on chromium lines after dry etch, were carried out both in a field emission SEM and with a calibrated optical linewidth measuring system. A focused ion beam system was used to microsection selected resist lines on chromium and dry etched chromium lines for edge profile inspection.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Syed Ejazu Huq, Syed Ejazu Huq, Philip D. Prewett, Philip D. Prewett, } "Dry-etch characteristics of chemically amplified and onium-salt-sensitized electron-beam resists", Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994); doi: 10.1117/12.175822; https://doi.org/10.1117/12.175822
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