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13 May 1994 Pulsed electron-beam source for high-resolution high-throughput microlithography
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Research and development of a broad area (> 1 cm diameter), high brightness (approximately 107 A/cm2 rad2), high current density (> 50 A/cm2), pulsed electron beam source for high throughput, high resolution (< 0.25 micrometers ) lithography is reported. This novel electron beam source is simple, robust, will cost significantly less than direct write electron beam systems, and allows for high throughput pattern generation (> 30 2 - 3 inch wafers/hr). The electron beam is produced by the back-lighted thyratron (BLT) and is transported through a dielectric tube to achieve focusing and collimation. Replication of 10 $,mum line structures in PMMA using a nickel grid mask has been achieved. At present, masks comprised of diamond thin film (1 - 15 micrometers ) membranes on a silicon substrate are being fabricated to study the replication of submicrometer structures in PMMA. In this case, of primary importance are mask heating and deformation.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tseng-Yang Hsu, Peyman Hadizad, Rong Lin Liou, Greg Roth, and Martin A. Gundersen "Pulsed electron-beam source for high-resolution high-throughput microlithography", Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994);

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