Rule-based approach to e-beam and process-induced proximity effect correction for phase-shifting mask fabrication

Christophe Pierrat; Joseph G. Garofalo; John DeMarco; Sheila Vaidya; Oberdan W. Otto

doi:10.1117/12.175817

13 May 1994 Rule-based approach to e-beam and process-induced proximity effect correction for phase-shifting mask fabrication

Christophe Pierrat, Joseph G. Garofalo, John DeMarco, Sheila Vaidya, Oberdan W. Otto

Author Affiliations +

Proceedings Volume 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV; (1994) https://doi.org/10.1117/12.175817
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

A rule-based compensation for mask feature dimensions is proposed. This technique is based on the post-process measurement of select pattern configurations. These include isolated lines, isolated spaces, and lines and spaces ranging from 5 micrometers to below 0.5 micrometers on a test vehicle mask. The difference between the coded size and the measured size is then plotted as a function of the target dimension. Using these data in conjunction with some choice `2D'-type patterns, a size correction is made for each distinct feature based upon the feature dimensions and its distance to the nearest neighbor. Given an effective rule representation, pattern corrections can be viably implemented on a chip scale by an automated feature compensation CAD system. The potential causes for proximity effect in our phase-shifting mask fabrication process and effectiveness of the proposed correction technique are also investigated.

Citation Download Citation

Christophe Pierrat, Joseph G. Garofalo, John DeMarco, Sheila Vaidya, and Oberdan W. Otto "Rule-based approach to e-beam and process-induced proximity effect correction for phase-shifting mask fabrication", Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994); https://doi.org/10.1117/12.175817

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