SPIE'S 1994 SYMPOSIUM ON MICROLITHOGRAPHY
27 February - 4 March 1994
San Jose, CA, United States
Chemical and Mechanical Aspects of Chemically Amplified Resist Materials
Proc. SPIE 2195, Robust and environmentally stable deep UV positive resist: optimization of SUCCESS ST2, 0000 (16 May 1994); doi: 10.1117/12.175338
Proc. SPIE 2195, Origin of delay times in chemically amplified positive DUV resists, 0000 (16 May 1994); doi: 10.1117/12.175348
Proc. SPIE 2195, Environmentally stable chemically amplified DUV resist based on diazoketone chemistry, 0000 (16 May 1994); doi: 10.1117/12.175359
Proc. SPIE 2195, Evaluation of a new environmentally stable positive tone chemically amplified deep-UV resist, 0000 (16 May 1994); doi: 10.1117/12.175370
Proc. SPIE 2195, Advanced positive photoresists for practical deep-UV lithography, 0000 (16 May 1994); doi: 10.1117/12.175381
Proc. SPIE 2195, Structure-property relationship in acetal-based chemically amplified three-component DUV resist, 0000 (16 May 1994); doi: 10.1117/12.175392
Proc. SPIE 2195, Effects of deprotected species on chemically amplified resist systems, 0000 (16 May 1994); doi: 10.1117/12.175401
Structure-Property Activity and Process Development of Chemically Amplified Systems
Proc. SPIE 2195, Relationship between physical properties and lithographic behavior in a high-resolution positive tone deep-UV resist, 0000 (16 May 1994); doi: 10.1117/12.175403
Proc. SPIE 2195, Structural design of acid-decomposable dissolution inhibitors for a 3-components positive CA resist, 0000 (16 May 1994); doi: 10.1117/12.175329
Proc. SPIE 2195, Dissolution characteristics optimization for chemically amplified positive resist, 0000 (16 May 1994); doi: 10.1117/12.175330
Proc. SPIE 2195, Synthesis, characterization, and lithography of alpha-substituted 2-nitrobenzyl arylsulfonate photo-acid generators with improved resistance to post exposure bake, 0000 (16 May 1994); doi: 10.1117/12.175331
Proc. SPIE 2195, Effect of resin molecular weight on the resolution of DUV negative photoresists, 0000 (16 May 1994); doi: 10.1117/12.175332
Proc. SPIE 2195, Acid size effect of chemically amplified negative resist on lithographic performance, 0000 (16 May 1994); doi: 10.1117/12.175333
Proc. SPIE 2195, Negative resists for i-line lithography utilizing acid-catalyzed intramolecular dehydration reaction, 0000 (16 May 1994); doi: 10.1117/12.175334
Proc. SPIE 2195, Photogenerated acid-catalyzed formation of phosphonic/phosphoric acids by deprotection of esters, 0000 (16 May 1994); doi: 10.1117/12.175335
Proc. SPIE 2195, Transparent photoacid generator (ALS) for ArF excimer laser lithography and chemically amplified resist, 0000 (16 May 1994); doi: 10.1117/12.175336
Proc. SPIE 2195, Quantum chemical studies of chemically amplified resist materials for electron-beam and ArF excimer laser, 0000 (16 May 1994); doi: 10.1117/12.175337
Proc. SPIE 2195, Investigation of onium salt type photoacid generators in positive DUV resist systems, 0000 (16 May 1994); doi: 10.1117/12.175339
Proc. SPIE 2195, Properties and performance of near-UV reflectivity control layers (RCL), 0000 (16 May 1994); doi: 10.1117/12.175340
Proc. SPIE 2195, Process window analysis of the ARC and TAR systems for quarter-micron optical lithography, 0000 (16 May 1994); doi: 10.1117/12.175341
Proc. SPIE 2195, Deep-UV resists based on methacrylamide copolymers, 0000 (16 May 1994); doi: 10.1117/12.175342
Proc. SPIE 2195, Comparison of the lithographic characteristics of t-BOC-based chemically amplified resist system under deep-UV and electron-beam exposures, 0000 (16 May 1994); doi: 10.1117/12.175343
Proc. SPIE 2195, Role of process in obtaining optimum lithographic information from chemically amplified resists, 0000 (16 May 1994); doi: 10.1117/12.175344
Proc. SPIE 2195, Dialkyl fumarate copolymers: new photoresist materials for deep-ultraviolet and mid-ultraviolet microlithography, 0000 (16 May 1994); doi: 10.1117/12.175345
Proc. SPIE 2195, Effect of partial deprotection on lithographic properties of t-butoxycarbonyloxystyrene-containing polymers, 0000 (16 May 1994); doi: 10.1117/12.175346
Proc. SPIE 2195, I-line negative resist (INR): a negative-tone I-line chemically amplified photoresist, 0000 (16 May 1994); doi: 10.1117/12.175347
Proc. SPIE 2195, Diffusion effects in chemically amplified deep-UV resists, 0000 (16 May 1994); doi: 10.1117/12.175349
Proc. SPIE 2195, Further improvements in CGR formulation and process, 0000 (16 May 1994); doi: 10.1117/12.175350
Proc. SPIE 2195, Photochemical amplified PMMA resists, 0000 (16 May 1994); doi: 10.1117/12.175351
Dry-Developed Resists/Top Surface Imaging Systems and Chemistry and Process Development of Antireflective coatings
Proc. SPIE 2195, Plasma polymerized organosilane network polymers: high-performance resists for positive and negative tone deep UV lithography, 0000 (16 May 1994); doi: 10.1117/12.175352
Proc. SPIE 2195, 0.25 um lithography development using positive mode top surface imaging photoresist, 0000 (16 May 1994); doi: 10.1117/12.175353
Proc. SPIE 2195, Characterization of the quarter-micron i-line lithography using a top surface imaging process, 0000 (16 May 1994); doi: 10.1117/12.175354
Proc. SPIE 2195, Proximity effects in dry developed lithography for sub-0.35 um application, 0000 (16 May 1994); doi: 10.1117/12.175355
Proc. SPIE 2195, Lithographic strategies for 0.35 um poly gates for random logic applications, 0000 (16 May 1994); doi: 10.1117/12.175356
Proc. SPIE 2195, Design of a bottom antireflective layer for optical lithography, 0000 (16 May 1994); doi: 10.1117/12.175357
Proc. SPIE 2195, Materials evaluation of antireflective coatings for single-layer 193-nm lithography, 0000 (16 May 1994); doi: 10.1117/12.175358
Proc. SPIE 2195, Improved reflectivity control of APEX-E positive tone deep UV photoresist, 0000 (16 May 1994); doi: 10.1117/12.175360
Proc. SPIE 2195, Novel spacer technique by silylation: experiment and simulation, 0000 (16 May 1994); doi: 10.1117/12.175361
Proc. SPIE 2195, Evaluation of a bilayer resist system based on a zirconium-containing polymer, 0000 (16 May 1994); doi: 10.1117/12.175362
Proc. SPIE 2195, Deep ultraviolet positive resist image by dry etching (DUV PRIME): a robust process for 0.3 um contact holes, 0000 (16 May 1994); doi: 10.1117/12.175363
Proc. SPIE 2195, Diffusion enhanced silylation resist (DESIM): a simulator for the DESIRE process, 0000 (16 May 1994); doi: 10.1117/12.175364
Proc. SPIE 2195, Liquid phase silylation process for 248 nm lithography using EL IR photoresist, 0000 (16 May 1994); doi: 10.1117/12.175365
Dissolution Inhibition Systems: Chemical, Mechanistic, Process Development, and Modeling Aspects
Proc. SPIE 2195, Percolation view of novolak dissolution: 3. dissolution inhibition, 0000 (16 May 1994); doi: 10.1117/12.175366
Proc. SPIE 2195, Dissolution behavior of the chemically modified polyvinylphenol with introduced high-ortho structure, 0000 (16 May 1994); doi: 10.1117/12.175367
Proc. SPIE 2195, Lithographic performance of isomeric hydroxystyrene polymers, 0000 (16 May 1994); doi: 10.1117/12.175368
Proc. SPIE 2195, Highly regioselective PACs for i-line resist design: synthetic reaction model, dissolution kinetics and lithographic response, 0000 (16 May 1994); doi: 10.1117/12.175369
Proc. SPIE 2195, Characterization of the development of DNO/novolac resists by surface energy measurements, 0000 (16 May 1994); doi: 10.1117/12.175371
Proc. SPIE 2195, Modeling of solvent evaporation effects for hot plate baking of photoresist, 0000 (16 May 1994); doi: 10.1117/12.175372
Proc. SPIE 2195, Role of residual casting solvent in dissolution behavior of poly (3-methyl-4-hydroxystyrene) films, 0000 (16 May 1994); doi: 10.1117/12.175373
Proc. SPIE 2195, Influence of retained and absorbed solvent on novolak and resist film dissolution and thermal behavior, 0000 (16 May 1994); doi: 10.1117/12.175374
Proc. SPIE 2195, Reliability of photospeed and related measures of resist performances, 0000 (16 May 1994); doi: 10.1117/12.175375
Proc. SPIE 2195, Influence of post exposure bake on resist contrast, 0000 (16 May 1994); doi: 10.1117/12.175376
Structure-Property Activity and Process Development of Chemically Amplified Systems
Proc. SPIE 2195, I-line negative resist manufacturing process qualification, 0000 (16 May 1994); doi: 10.1117/12.175377