16 May 1994 Advanced positive photoresists for practical deep-UV lithography
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New positive tone deep UV resists with enhanced post-exposure delay (PED) latitude and process latitude are presented. Additives and functionalized sulfone terpolymers are tailored to optimize the dissolution properties and process stability. Adjustment of the dissolution rate is used as a design criterion for optimizing the resist performance. RX 165 resist, optimized using the above criteria, exhibits 0.25 micron line/space resolution, 0.8 micrometers focus latitude at 0.275 micrometers resolution, and 1 hour post exposure delay latitude.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Norbert Muenzel, Norbert Muenzel, Heinz E. Holzwarth, Heinz E. Holzwarth, Pasquale A. Falcigno, Pasquale A. Falcigno, Hans-Thomas Schacht, Hans-Thomas Schacht, Reinhard Schulz, Reinhard Schulz, Omkaram Nalamasu, Omkaram Nalamasu, Allen G. Timko, Allen G. Timko, Elsa Reichmanis, Elsa Reichmanis, Janet M. Kometani, Janet M. Kometani, Douglas R. Stone, Douglas R. Stone, Thomas X. Neenan, Thomas X. Neenan, Edwin A. Chandross, Edwin A. Chandross, Sydney G. Slater, Sydney G. Slater, M. D. Frey, M. D. Frey, Andrew J. Blakeney, Andrew J. Blakeney, } "Advanced positive photoresists for practical deep-UV lithography", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175381; https://doi.org/10.1117/12.175381

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