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16 May 1994 Comparison of the lithographic characteristics of t-BOC-based chemically amplified resist system under deep-UV and electron-beam exposures
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Abstract
The electron-beam lithographic response of CAMP6 is evaluated and compared to the characteristics of the chemically amplified resist under deep UV exposure. The optimization of the electron- beam lithographic properties of the positive deep UV resist CAMP6 has been performed by evaluating the effects of prebake temperature (ranging from 115 to 140 degree(s)C) and post-exposure bake temperature (ranging from 115 to 150 degree(s)C) on the observed resist thickness loss and percent of t-BOC group deprotection as measured by IR spectroscopy.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Regine G. Tarascon-Auriol, Anthony E. Novembre, Woon Wai Tai, Linus A. Fetter, Janet M. Kometani, and Omkaram Nalamasu "Comparison of the lithographic characteristics of t-BOC-based chemically amplified resist system under deep-UV and electron-beam exposures", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175343
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