16 May 1994 Dissolution characteristics optimization for chemically amplified positive resist
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Abstract
Dissolution kinetics of a 3-component chemically amplified positive resist, which consists of t-BOC protected phenolic resin, benzenesulfonic acid derivative as a PAG and an additional dissolution inhibitor, have been investigated under various conditions. Especially, the effects of t-BOC protection ratio and molecular weight of the base resin have been studied. In a previous paper, we reported that the dissolution rate R of a 2- component positive resist was determined by one rate determining step, i.e., developer penetration into hydrophobic t-BOC protected phenolic resin. Rapid formation of surface insoluble layer which induced T-toping profiles deteriorated its original resist performance. In this paper, we evaluated both t-BOC protection ratio and the molecular weight dependencies of the dissolution characteristics. The 3-component resist evaluated did not produce distinct T-topping profile when time duration between exposure and PEB was within 30 minutes.
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Toshiro Itani, Toshiro Itani, Haruo Iwasaki, Haruo Iwasaki, Masashi Fujimoto, Masashi Fujimoto, Kunihiko Kasama, Kunihiko Kasama, } "Dissolution characteristics optimization for chemically amplified positive resist", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175330; https://doi.org/10.1117/12.175330
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