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16 May 1994 Environmentally stable chemically amplified DUV resist based on diazoketone chemistry
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This paper describes a resist that uses a polymer bound diazoacetoacetate as a photoacid generator in a two component system. The diazoacetoacetate is not used merely as a photoactive component, but its utility is extended to function as a photoacid generator for deprotection chemistry. The carboxylic acid generated upon exposure deprotects carboxylic acid-labile groups bound to another polymer backbone. This scheme has led to a resist with excellent performance like lithographically useful photospeed, resolution, environmental stability and aqueous base solubility combined with wide process latitudes. The resist does not require a topcoat or additives for stabilization towards airborne contaminants. The photo acid is a weak acid and hence allows fairly high concentrations of the acid generator to be used which helps in reducing contamination effects. Furthermore, being bound to a polymer backbone, diffusion into unexposed regions is limited and therefore exhibits greater stability towards PEB delay effects. Loss from surface due to volatility is also reduced in a polymeric acid generator compared to low molecular weight, monomeric compounds.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Premlatha Jagannathan, Wu-Song Huang, Ahmad D. Katnani, George J. Hefferon, and Robert L. Wood "Environmentally stable chemically amplified DUV resist based on diazoketone chemistry", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994);

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