Evaluation of a new environmentally stable positive tone chemically amplified deep-UV resist

Wu-Song Huang; Ranee W. Kwong; Ahmad D. Katnani; Mahmoud Khojasteh

doi:10.1117/12.175370

16 May 1994 Evaluation of a new environmentally stable positive tone chemically amplified deep-UV resist

Wu-Song Huang, Ranee W. Kwong, Ahmad D. Katnani, Mahmoud Khojasteh

Proceedings Volume 2195, Advances in Resist Technology and Processing XI; (1994) https://doi.org/10.1117/12.175370
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

Similar to most of the reported positive deep-UV resists, this new resist is also a chemically amplified system. However, unlike other resists, this resist if resilient to airborne base contaminants and it shows stable resist linewidth with more than 24 hours delay between exposure and develop. This resist has high sensitivity (17-18 mJ/cm2), high contrast (7), high resolution (0.35 micrometers with (lambda) equals 248 nm and NA equals 0.37) and large process latitude in deep UV-lithography. This system does not require postexposure bake. When a postexposure bake is introduced, the linewidth variation is in the range of 2-3 nm per degree. This eliminates the concern of linewidth variation in resist images due to slight variation of postexposure baking temperature, which is commonly encountered in chemically amplified resist systems. This resist system is environmentally stable like conventional DQ system; at the same time, it retains most of the merits of chemically amplified system.

Citation Download Citation

Wu-Song Huang, Ranee W. Kwong, Ahmad D. Katnani, and Mahmoud Khojasteh "Evaluation of a new environmentally stable positive tone chemically amplified deep-UV resist", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175370

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