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16 May 1994 Evaluation of a new environmentally stable positive tone chemically amplified deep-UV resist
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Similar to most of the reported positive deep-UV resists, this new resist is also a chemically amplified system. However, unlike other resists, this resist if resilient to airborne base contaminants and it shows stable resist linewidth with more than 24 hours delay between exposure and develop. This resist has high sensitivity (17-18 mJ/cm2), high contrast (7), high resolution (0.35 micrometers with (lambda) equals 248 nm and NA equals 0.37) and large process latitude in deep UV-lithography. This system does not require postexposure bake. When a postexposure bake is introduced, the linewidth variation is in the range of 2-3 nm per degree. This eliminates the concern of linewidth variation in resist images due to slight variation of postexposure baking temperature, which is commonly encountered in chemically amplified resist systems. This resist system is environmentally stable like conventional DQ system; at the same time, it retains most of the merits of chemically amplified system.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wu-Song Huang, Ranee W. Kwong, Ahmad D. Katnani, and Mahmoud Khojasteh "Evaluation of a new environmentally stable positive tone chemically amplified deep-UV resist", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994);

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