16 May 1994 Novel spacer technique by silylation: experiment and simulation
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A new advanced process scheme is presented using a self aligned sidewall oxide film formation. The process technique was evaluated with simulation methods. During the experiments a new effect, the selective silylation, was found.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ulrich A. Jagdhold, Ulrich A. Jagdhold, Lothar Bauch, Lothar Bauch, A. Wolff, A. Wolff, Joachim J. Bauer, Joachim J. Bauer, } "Novel spacer technique by silylation: experiment and simulation", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175361; https://doi.org/10.1117/12.175361

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