Photoresist thermal stability measurements using laser scatterometry

Robert A. Norwood; Douglas P. Holcomb; Chet J. Sobodacha; Thomas J. Lynch

doi:10.1117/12.175389

16 May 1994 Photoresist thermal stability measurements using laser scatterometry

Robert A. Norwood, Douglas P. Holcomb, Chet J. Sobodacha, Thomas J. Lynch

Proceedings Volume 2195, Advances in Resist Technology and Processing XI; (1994) https://doi.org/10.1117/12.175389
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

Thermal stability of photoresists has been measured using laser scatterometry. This new laser scatterometry technique is more rapid and more sensitive than scanning electron microscopy (SEM) methods. Patterned resists are slowly heated while various diffraction order intensities are measured. Changes in the diffraction intensities correlate well with thermal stabilities measured by SEM methods.

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Robert A. Norwood, Douglas P. Holcomb, Chet J. Sobodacha, and Thomas J. Lynch "Photoresist thermal stability measurements using laser scatterometry", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175389

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