16 May 1994 Process tube characterization method for photoresist and process comparison
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Abstract
The behavior of the focus-exposure window for a half micron process was analyzed across a range of resist thicknesses. The range examined was selected to encompass a minima through maxima region of the I-line swing curve. This analysis is shown for an I-line resist; the undyed version contrasted to the dyed. The process tube characterization method calculates the common corridor exposure latitude for the two resist data sets. The common corridor for a given resist system defines that area in the focus-exposure plane that meets a single process specification for all the resist thicknesses in the selected swing curve range. In this study the undyed resist demonstrates a superior process window at a given resist thickness but is found to be inferior to the dyed resist as determined by the process tube characterization method.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
George P. Mirth, George P. Mirth, Joseph C. Pellegrini, Joseph C. Pellegrini, "Process tube characterization method for photoresist and process comparison", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); doi: 10.1117/12.175399; https://doi.org/10.1117/12.175399
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