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1 May 1994 AFM application on the topography study of stack cell DRAM processes
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The stacked cell design of DRAM processes for lithography considerations has suffered severe topography step-height and unsmooth surface issues. In addition, the stability and uniformity control of thin film processes on the backend process can affect lithography process to a great extent. In this study, the AFM (atomic force microscope) has been used to study topography issues of a typical DRAM process. The detailed information concerning the topography step- height, flow angle, local unsmooth surface, etc., have been clearly identified. These studies provide useful information for future process development and improvement.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel Hao-Tien Lee and Gwo-Yuh Shiau "AFM application on the topography study of stack cell DRAM processes", Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994);

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