1 May 1994 Low-loss electron imaging and its application to critical dimension metrology
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Low-loss electron (LLE) imaging has been shown to have significant advantages over both secondary electron and conventional backscattered electron imaging for the purposes of inspection and critical dimension metrology of integrated circuits. LLE images had high- resolution, good atomic contrast and fewer charging artifacts. Further, they were easily optimized using Monte Carlo simulations; and the optimized LLE images showed excellent precision, accuracy, and linearity in both process control and focus-exposure applications.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kevin M. Monahan, Kevin M. Monahan, M. Davidson, M. Davidson, Zofia Grycz, Zofia Grycz, Royce Krieger, Royce Krieger, B. Scheumaker, B. Scheumaker, Robert Zmrzli, Robert Zmrzli, } "Low-loss electron imaging and its application to critical dimension metrology", Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); doi: 10.1117/12.174122; https://doi.org/10.1117/12.174122

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