Paper
1 May 1994 New submicron dimension reference for electron-beam metrology system
Yoshinori Nakayama, Kouji Toyoda
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Abstract
A novel submicron dimension reference for calibrating electron-beam metrology systems has been developed. A fine rectangular-profile diffraction grating fabricated by laser interferometer lithography and anisotropic chemical etching of (110) crystalline silicon satisfies any conditions for submicron dimension reference. In this reference, pitch size of about 0.2 micrometers is easily obtained by laser interferometer lithography with an accuracy, shown by optical diffraction measurement, of within 1 nm. This reference also satisfies several requirements for electron-beam metrology systems. It is stable and free from build-up of charge under electron-beam irradiation because it is fabricated from a conductive silicon single crystal. Also it generates high-contrast secondary electron signals due to high-aspect ratio grating profile. Evaluation of this reference by optical diffraction measurement and electron- beam CD measurements show high performance for submicron dimension calibration. In electron-beam CD measurements, the deviation of repeated measurements is under 5 nm within 3 (sigma) .
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshinori Nakayama and Kouji Toyoda "New submicron dimension reference for electron-beam metrology system", Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); https://doi.org/10.1117/12.174166
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CITATIONS
Cited by 18 scholarly publications.
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KEYWORDS
Metrology

Optical testing

Calibration

Crystals

Diffraction

Diffraction gratings

Interferometers

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