1 May 1994 Printability of submicron 5X reticle defects at G-line, I-line, and deep UV exposure wavelengths
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Abstract
The printability of sub-micron 5X reticle defects at G-Line, I-Line, and DUV (248 nm) wavelengths is assessed by both practical experiment and computer simulation. The photoresist exposure and development parameters were measured, where necessary, and used for the modeling with the same specifically designed test reticle incorporating defects whose size, and proximity to adjacent features, varies within sub-micron line/space arrays. Results are presented by plotting minimum printed defect vs array linewidth for both adjacent and isolated defect sites. The resist modeling program SOLID has been used extensively, not only to simulate the practical work at all 3 wavelengths, but additionally to create a 3D representation of the effects caused by the printed defects. Results on defect printability enable future reticle procurement specifications to be established.
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Graham G. Arthur, Graham G. Arthur, Brian Martin, Brian Martin, Francis N. Goodall, Francis N. Goodall, Ian M. Loader, Ian M. Loader, } "Printability of submicron 5X reticle defects at G-line, I-line, and deep UV exposure wavelengths", Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); doi: 10.1117/12.174155; https://doi.org/10.1117/12.174155
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