1 May 1994 Steady state particle motion in a single wafer reactor
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Abstract
The steady state motion of a particle in a single wafer reactor is investigated by mathematical simulation. The goal is to determine the effects of the operating conditions on particle contamination. The flow simulations show that particle contamination during steady state processing (nonplasma) is small in single-wafer reactors running at moderate conditions. Steady state contamination of the wafers occurs when the particle momentum is large, due either to large particles or high velocities which can be from either high flow rates or low pressures. However, for low velocities and large residence times, gravity will cause particles to settle out of the flow. For this case, face-down processing has a large advantage over face- up. Thermophoretic forces are very important at low velocities. Hot surfaces remain clean, whereas cold surfaces become contaminated. Since steady state contamination is not very likely for small particles, contamination may arise from large particles that break up on impact or from nonsteady operation when the gases are turned on and off.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel D. White, "Steady state particle motion in a single wafer reactor", Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); doi: 10.1117/12.174142; https://doi.org/10.1117/12.174142
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KEYWORDS
Particles

Semiconducting wafers

Contamination

Particle contamination

Gases

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