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17 May 1994 Analysis of microlithography in an open-architecture TCAD system
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The paper offers the results of investigations of forming the submicron topological structures of the `contact window'-type by using only all-dry vacuum and plasmas technologies. Analysis is made of the relationship between lithographic and electric parameters of contact systems with micron-size features. A technological process of manufacturing a three-layer structure `metal-dielectric-metal' by using the LVPL is developed to study electric characteristic of systems with micron and submicron contact windows. Analysis is made of the 0.5 - 1.0 micrometers to 0.5 - 0.3 micrometers . To form masks, use was made of vacuum resist 0.4 to 0.7 micrometers films deposited onto 0.29 micrometers thick silicon oxide layers on a silicon substrate. The resist was subjected to exposure with simultaneous development on a LVPL apparatus. An average of laser radiation power, a pulse repetition rate, a degree of vacuum were maintained constant, while a dose was varied by changing the exposure at E equals 1 J/cm2. Next plasmochemical etching of Al or silicon oxide was performed through a vacuum resist-mask.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valery Axelrad, Victor V. Boksha, Yuri Granik, Ognjen Milic, Juan C. Rey, D. Ward, and Eduard I. Tochitsky "Analysis of microlithography in an open-architecture TCAD system", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994);


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