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17 May 1994 Application of CVD antireflective-layer process for sub-half-micrometer devices
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The lithographic performance and process applicability of the anti-reflective-layer (ARL) process using amorphous carbon have been studied in i-line and KrF excimer laser lithography. The ARL thickness of 30 nm was used. With ARL, the reflectivity from the silicon substrate reduced to less than 30%. The reduction of the reflectivity with ARL process was effective not only for the silicon substrate but also for the tungsten silicide substrate and aluminum substrate. The pattern profile and depth of focus in the resist on ARL were almost the same as those without ARL. The ARL process has been successfully applied for the fabrication of 0.35 micrometers CMOS polycide gate fabrication using i-line lithography and 0.35 micrometers DRAM aluminum wiring using excimer laser lithography.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideaki Mito, Yoshiyuki Tani, Yoshimitsu Okuda, Yoshihiro Todokoro, Toshiaki Tatsuta, Mikio Sawai, and Osamu Tsujii "Application of CVD antireflective-layer process for sub-half-micrometer devices", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994);

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