Paper
17 May 1994 Application of subresolution phase-shift mask with G-line stepper for sub-half-micrometer gate GaAs circuits
Yih-Cheng Shih, Joseph G. Garofalo
Author Affiliations +
Abstract
KrF lasers with up to 500 Hz repetition rate and a bandwidth of about 1 pm are in use for DUV-microlithography. Increasing resist sensitivity demands for even higher repetition rate are needed in order to allow precise dose control. In some cases step & scan exposure tools apply reflective optics instead of refractive ones. This diminishes the bandwidth requirements by about two orders of magnitude, but a high polarization degree of >= 98% is a basic requirement for the laser light source. Dose control and statistics define the second basic requirement for the laser. A dose accuracy of less than 2% demands small energy increments, i.e., for pulse energy in the 10 to 20 mJ range. Throughput requires 10 to 20 W of average laser power. Therefore, the repetition rate must be in the 1 kHz range.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yih-Cheng Shih and Joseph G. Garofalo "Application of subresolution phase-shift mask with G-line stepper for sub-half-micrometer gate GaAs circuits", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); https://doi.org/10.1117/12.175454
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Gallium arsenide

Phase shifts

Metals

Scanning electron microscopy

Semiconducting wafers

Phase shifting

Back to Top