17 May 1994 Attenuated phase-shifting mask with a single-layer absorptive shifter of CrO, CrON, MoSiO, and MoSiON film
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Abstract
Attenuated phase-shifting mask with a single-layer absorptive shifter of CrO, CrON, MoSiO or MoSiON films has been developed. The optical parameter of these films can be controlled by the condition of sputtering deposition. These films satisfy the shifter requirements, both the 180-degrees phase shift and the transmittance between 5 and 20% for i-line. MoSiO and MoSiON films also satisfy the requirement for KrF excimer laser light. Conventional mask processes, such as etching, cleaning, defect inspection and defect repair, can be used for the mask fabrication. Defect-free masks for hole layers of 64 M-bit DRAM are obtained. Using this mask, the focus depth of 0.35-micrometers hole is improved from 0.6 micrometers to 1.5 micrometers for i-line lithography. The printing of 0.2-micrometers hole patterns is achieved by the combination of this mask and KrF excimer laser lithography.
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Masayuki Nakajima, Masayuki Nakajima, Nobuyuki Yoshioka, Nobuyuki Yoshioka, Junji Miyazaki, Junji Miyazaki, Haruhiko Kusunose, Haruhiko Kusunose, Kunihiro Hosono, Kunihiro Hosono, Hiroaki Morimoto, Hiroaki Morimoto, Wataru Wakamiya, Wataru Wakamiya, Keiichi Murayama, Keiichi Murayama, Yaichiro Watakabe, Yaichiro Watakabe, Katsuhiro Tsukamoto, Katsuhiro Tsukamoto, "Attenuated phase-shifting mask with a single-layer absorptive shifter of CrO, CrON, MoSiO, and MoSiON film", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175405; https://doi.org/10.1117/12.175405
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