Comparison of I-line and deep-UV technologies for 0.35-um lithography

Kevin J. Orvek; Joseph J. Ferrari; Sasha K. Dass; Daniel A. Corliss; James R. Buchanan; MaryAnn Piasecki

doi:10.1117/12.175433

17 May 1994 Comparison of I-line and deep-UV technologies for 0.35-um lithography

Kevin J. Orvek, Joseph J. Ferrari, Sasha K. Dass, Daniel A. Corliss, James R. Buchanan, MaryAnn Piasecki

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Proceedings Volume 2197, Optical/Laser Microlithography VII; (1994) https://doi.org/10.1117/12.175433
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

An experimental comparison of i-line lithography and deep-UV lithography was performed for 0.35 micrometers patterning of isolation level, polysilicon level, and the contact level. Both techniques used standard illumination and standard masks. The i-line process used conventional single level DNQ resists. The deep-UV work used a commercially available single level chemically amplified positive resist, with additional use of bottom-layer organic anti-reflective layers on some levels. The results highlighted the problems of pushing i-line lithography to the 0.35 micrometers regime and demonstrated the manufacturable process latitudes available with deep-UV lithography.

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Kevin J. Orvek, Kevin J. Orvek, Joseph J. Ferrari, Joseph J. Ferrari, Sasha K. Dass, Sasha K. Dass, Daniel A. Corliss, Daniel A. Corliss, James R. Buchanan, James R. Buchanan, MaryAnn Piasecki, MaryAnn Piasecki, } "Comparison of I-line and deep-UV technologies for 0.35-um lithography", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175433; https://doi.org/10.1117/12.175433

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