Comparison of I-line and deep-UV technologies for 0.35-um lithography

Kevin J. Orvek; Joseph J. Ferrari; Sasha K. Dass; Daniel A. Corliss; James R. Buchanan; MaryAnn Piasecki

doi:10.1117/12.175433

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17 May 1994 Comparison of I-line and deep-UV technologies for 0.35-um lithography

Kevin J. Orvek, Joseph J. Ferrari, Sasha K. Dass, Daniel A. Corliss, James R. Buchanan, MaryAnn Piasecki

Proceedings Volume 2197, Optical/Laser Microlithography VII; (1994) https://doi.org/10.1117/12.175433
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

An experimental comparison of i-line lithography and deep-UV lithography was performed for 0.35 micrometers patterning of isolation level, polysilicon level, and the contact level. Both techniques used standard illumination and standard masks. The i-line process used conventional single level DNQ resists. The deep-UV work used a commercially available single level chemically amplified positive resist, with additional use of bottom-layer organic anti-reflective layers on some levels. The results highlighted the problems of pushing i-line lithography to the 0.35 micrometers regime and demonstrated the manufacturable process latitudes available with deep-UV lithography.

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Kevin J. Orvek, Joseph J. Ferrari, Sasha K. Dass, Daniel A. Corliss, James R. Buchanan, and MaryAnn Piasecki "Comparison of I-line and deep-UV technologies for 0.35-um lithography", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); https://doi.org/10.1117/12.175433

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