17 May 1994 Correcting for proximity effect widens process latitude
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Proceedings Volume 2197, Optical/Laser Microlithography VII; (1994); doi: 10.1117/12.175430
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States
Abstract
The optical proximity effect can be a substantial fraction of the CD error budget. It is insufficient to determine the proximity effect as the difference between line-width in an equal line/gap pattern with that of an isolated line. Other geometries may have greater proximity induced line-width errors. We present here a comprehensive, four parameter, analytic process to characterize actual proximity. It is shown that when individual, geometry-dependent line bias is applied line-width uniformity can be reduced to the +/- 10 nm range. Using the +/- 10% CD criteria, individual line bias expands the range of exposure dose and depth of focus.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard C. Henderson, Oberdan W. Otto, "Correcting for proximity effect widens process latitude", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175430; https://doi.org/10.1117/12.175430
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Photomasks

Critical dimension metrology

Lithium

Manufacturing

Very large scale integration

Process control

Visualization

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