17 May 1994 Fabrication of phase-shifting masks employing multilayer films
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Abstract
The design and fabrication of phase shifting masks using multi-layer films are summarized. Mask blanks consist of fused silica substrates coated with a top chrome layer, an SiO2 phase layer, and an etch-stop layer. The layer thicknesses are designed to give a (pi) -phase shift at 248 nm (or at 365 nm), and equal and maximal transmission at etched and non-etched regions. The chrome layer is patterned by e-beam resist and is etched by reactive ion etching (RIE) with Cl2 chemistry. The SiO2 layer is patterned by another e-beam resist in registration with first chrome pattern and is etched by RIE with CHF3 chemistry. Two materials were investigated as the etch stop layer, namely Al2O3 and HfO2, with the latter having advantageous properties. It is shown that a 20% processing window is achieved in this type of PSM for a 5 degree phase accuracy as in contrast to quartz etched PSM in which the etched depth and uniformity has to be controlled to within 2.5% for a similar phase accuracy.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. C. Chieu, T. C. Chieu, Kwang Kuo Shih, Kwang Kuo Shih, Derek B. Dove, Derek B. Dove, } "Fabrication of phase-shifting masks employing multilayer films", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175412; https://doi.org/10.1117/12.175412
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