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17 May 1994 Metal layer resist process optimization by design of experiment
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Abstract
The lithography processes for the metal layers of stacked DRAM have normally been considered as one of the most important steps to determine the chip yield performance. The severe topography step-height on the metal resist processes normally leads to an insufficient UDOF for production. The Taguchi design of experiment (DOE) method is chosen in this study to optimize the resist processes on metal layers with a 1.0 micrometers topography step. The resist process parameters are arranged into the orthogonal arrays and to experimentally determine the optimized conditions for resist patterned over the severe topography step-height with 1.2 micrometers pitches. The important factors controlling the process window are reported in the paper. An increase of 4 dB in S/N response, which corresponds to an increase of 0.4 micrometers in DOF and 6% in exposure window, is achieved by using the design of the experiment. Furthermore, the control factors to determine the optimized process conditions for thick resist processes on metal topography wafers can be quite different from those for thin resist processes on bare silicone wafers.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gwo-Yuh Shiau, Daniel Hao-Tien Lee, and Hwang-Kuen Lin "Metal layer resist process optimization by design of experiment", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); https://doi.org/10.1117/12.175493
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