17 May 1994 Multiple-exposure interferometric lithography
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Abstract
Interferometric lithography provides a simple, inexpensive technique for the fabrication of large areas of extreme sub-micrometers structures. Using a 364 nm Ar-ion laser source, gratings with periods to 0.2 micrometers and CDs as small as 30 nm are reported. Multiple exposure interferometric lithography provides the all important extension to 2-D structures. Importantly, pairwise exposures maintain the effectively infinite depth-of-field while still allowing complex structures. Mix and match with conventional optical lithography provides additional flexibility. An interdigitated structure suitable for high-speed photodetectors and conductive particle sensors is an example.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Saleem H. Zaidi, Steven R. J. Brueck, "Multiple-exposure interferometric lithography", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175478; https://doi.org/10.1117/12.175478
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