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17 May 1994 Overcoming global topography and improving lithographic performance using a transmittance controlled mask
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Abstract
As device density increases, topography gets more severe and optical proximity effect becomes worse. If light intensity can be controlled for individual patterns, linewidth variation over topography and optical proximity effect can also be minimized. A new method to solve these problems named transmittance controlled mask (TCM) is proposed. TCM is such a mask that thin absorptive films remain on the areas where light attenuation is necessary. In this paper, TCM is prepared and evaluated in view of topography and optical proximity effect improvement as well as process latitude improvement. Greatly improved process latitude was observed over 1.5 micrometers aluminum topography with TCM, while no process latitude was obtained with conventional masks even over 0.9 micrometers topography. Good optical proximity control is also possible with TCM.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Woo-Sung Han, Chang-Jin Sohn, Hoyoung Kang, Young-Bum Koh, and Moon-Yong Lee "Overcoming global topography and improving lithographic performance using a transmittance controlled mask", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); https://doi.org/10.1117/12.175408
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