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17 May 1994 Substrate contamination effects in the processing of chemically amplified DUV photoresists
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Abstract
The role of the wafer substrate in processing of chemically amplified DUV photoresists has been examined. Various substrates including silicon, oxide, titanium nitride, silicon nitride and metals were investigated with both positive and negative tone DUV resist systems. A `substrate contamination' effect was observed in some cases, which results in distorted photoresist profiles at the substrate/resist interface. This effect is interpreted in terms of neutralization of the photogenerated acid in the resist, and is dependent upon substrate deposition and clean conditions as well as exposure and post-expose bake processing. In addition, organic antireflective films are seen to act as effective barrier layers in some cases.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John L. Sturtevant, Steven J. Holmes, Stephen E. Knight, Denis Poley, Paul A. Rabidoux, Linda K. Somerville, Thomas L. McDevitt, Anthony Stamper, Ed Valentine, Will Conley, Ahmad D. Katnani, and James T. Fahey "Substrate contamination effects in the processing of chemically amplified DUV photoresists", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); https://doi.org/10.1117/12.175469
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