17 May 1994 Using behavior modeling for proximity correction
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Proceedings Volume 2197, Optical/Laser Microlithography VII; (1994); doi: 10.1117/12.175431
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States
Abstract
A proximity correction system supporting zone-sampling behavior modeling (see SPIE 2197- 28, `Fast proximity correction with zone sampling,') is described. The data flow for correcting integrated circuit layout patterns is explained. We outline the steps needed to generate and optimize behavior models, that serve as correction `rules.'
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael L. Rieger, John P. Stirniman, "Using behavior modeling for proximity correction", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); doi: 10.1117/12.175431; https://doi.org/10.1117/12.175431
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KEYWORDS
Semiconducting wafers

Photomasks

Data modeling

Lithography

Process modeling

Statistical modeling

Convolution

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