Paper
17 May 1994 Wide-field variable NA lens analysis for high-volume 0.5-um manufacturing
Paul W. Ackmann, Stuart E. Brown, Richard D. Edwards
Author Affiliations +
Abstract
Several techniques were used to evaluate and compare various lenses: optical, SEM, and electrical. In this paper, the emphasis is on `usable' critical dimensions and the effects of the lens on CD control. Lens results were examined at multiple numerical apertures (NAs) and partial coherence settings (PC) using a CD reticle with electrical CD structures over seventeen sites per field. The results were analyzed by electrical methods and a scanning electron microscope (SEM) with CD capability. The influence of external factors was minimized through the use of the same resist/developer batch at all testing locations. We selected electrical and SEM measurement methods for 0.40, 0.45, 0.50 micron structures and compared depth-of-focus, exposure latitude, CD linearity, and isolated vs. dense line/space pairs. Preliminary results show the benefits of electrical testing for increased confidence over the full lens field because of increased sample size. The optical method provided a quick and centered capability and matched electrical results closely. This testing methodology allowed AMD to evaluate lens performance of multiple systems and compare performance equally.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul W. Ackmann, Stuart E. Brown, and Richard D. Edwards "Wide-field variable NA lens analysis for high-volume 0.5-um manufacturing", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); https://doi.org/10.1117/12.175462
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KEYWORDS
Reticles

Critical dimension metrology

Scanning electron microscopy

Manufacturing

Semiconducting wafers

Cadmium

Electroluminescence

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