This paper presents research results on color centers induced by radiation of a xenon lamp in non doped crystals of yttrium aluminum garnet Y3Al5O12 (YAG), strontium- lanthanum aluminate SrLaAlO4 (SLAO), strontium-lanthanum gallate SrLaGa3O7 (SLGO), and in doped crystals: Nd:YAG, Cr, Tm, Ho:YAG (CTH:YAG), Nd:SLAO and Nd:SLGO. In all these investigated crystals under the influence of intensive exposure by xenon lamp radiation additional bands connected with centers O-2, O2 and centers F came up near the short-wave absorption edge. In the case of doped crystals the observed processes are much more complicated. In crystals CTH:YAG the greatest perturbations in relation to basic state are present at the short-wave absorption edge, as well as on areas of absorption bands of ions Cr+3 and Tm+3 conditioning the sensibilization process of ions Ho+3. These spectral structure disturbances essentially influence the efficiency of this process, as proven during generating investigations. In the case of SrLaGa3O7:Nd+3 under the influence of exposure substantial changes of absorption spectrum occurred on spectral areas 346 divided by 368 nm, 429 divided by 441 nm and 450 divided by 490 nm. Those changes have an irreversible character. They disappear not before the plate is being held at oxidizing atmosphere. Investigations of laser rods Nd:SLGO, CTH:YAG, and Nd:YAG in a free generation demonstrated that the color centers of these crystals are induced by pomp radiation from the spectral area up to 450 nm.