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1 March 1995 Quantum wells: a driving force of the progress in technology of semiconductor lasers
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Abstract
Continuous progress observed in performance of semiconductor lasers is to a great extent owed to implementation of quantum well heterostructures. Quantum confinement of carriers in such structures leads to lower threshold current density, higher quantum efficiency and output power, and to many more improvements of laser parameters. Most of them can be further developed when strained layer quantum well heterostructures are used. Application of quantum wires and dots are promising further advantages in the future.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bohdan Mroziewicz "Quantum wells: a driving force of the progress in technology of semiconductor lasers", Proc. SPIE 2202, Laser Technology IV: Research Trends, Instrumentation, and Applications in Metrology and Materials Processing, (1 March 1995); https://doi.org/10.1117/12.203240
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