16 August 1994 Novel reverse-bias auto-prepulse PFN for low voltage operation of a XeCl laser
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Proceedings Volume 2206, High-Power Gas and Solid State Lasers; (1994) https://doi.org/10.1117/12.184585
Event: Europto High Power Lasers and Laser Applications V, 1994, Vienna, Austria
Abstract
Efficient low voltage operation of a XeCl laser has been achieved setting a reverse-bias unit on the discharge gap of a system working in the auto-prepulse (AP) mode. Efficiencies up to 1.7% with this improved device even at a charging voltage as low as 7 kV for the main storage unit and for the bias are reported. Experimental results are presented and discussed.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. V. Chaltakov, I. V. Chaltakov, Roberto Pini, Roberto Pini, Renzo Salimbeni, Renzo Salimbeni, Matteo Vannini, Matteo Vannini, } "Novel reverse-bias auto-prepulse PFN for low voltage operation of a XeCl laser", Proc. SPIE 2206, High-Power Gas and Solid State Lasers, (16 August 1994); doi: 10.1117/12.184585; https://doi.org/10.1117/12.184585
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