7 September 1994 Creation of heterojunctions in Hg1-xCdxTe (x approximately equal to 0.2) by laser annealing without melting
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Proceedings Volume 2207, Laser Materials Processing: Industrial and Microelectronics Applications; (1994) https://doi.org/10.1117/12.184789
Event: Europto High Power Lasers and Laser Applications V, 1994, Vienna, Austria
Abstract
A high photo-sensitive area has been created in solid solution of Hg1-xCdxTe (x approximately equals 0.2) (MCT) without melting its surface. That idea of formation of heterojunction, which was indicated by computer modelling of mass transportation processes under laser treatment of MCT, is realized experimentally. MCT samples were irradiated with a Nd:YAG laser beam having an energy density 0.7 J/cm2. The presence of a heterojunction not far below the upper surface has been verified by X-ray microanalysis.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eugen Sheregii, Marian Kuzma, C. Abeynayake, Maegorzata M. Pociask, "Creation of heterojunctions in Hg1-xCdxTe (x approximately equal to 0.2) by laser annealing without melting", Proc. SPIE 2207, Laser Materials Processing: Industrial and Microelectronics Applications, (7 September 1994); doi: 10.1117/12.184789; https://doi.org/10.1117/12.184789
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