CONFERENCE PROCEEDINGS
Advanced Search >
Home > Proceedings > Volume 2207 > Article
Translator Disclaimer
7 September 1994 Creation of heterojunctions in Hg1-xCdxTe (x approximately equal to 0.2) by laser annealing without melting
Eugen Sheregii; Marian Kuzma; C. Abeynayake; Maegorzata M. Pociask
Author Affiliations +
Proceedings Volume 2207, Laser Materials Processing: Industrial and Microelectronics Applications; (1994) https://doi.org/10.1117/12.184789
Event: Europto High Power Lasers and Laser Applications V, 1994, Vienna, Austria
Abstract
A high photo-sensitive area has been created in solid solution of Hg1-xCdxTe (x approximately equals 0.2) (MCT) without melting its surface. That idea of formation of heterojunction, which was indicated by computer modelling of mass transportation processes under laser treatment of MCT, is realized experimentally. MCT samples were irradiated with a Nd:YAG laser beam having an energy density 0.7 J/cm2. The presence of a heterojunction not far below the upper surface has been verified by X-ray microanalysis.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Eugen Sheregii, Marian Kuzma, C. Abeynayake, and Maegorzata M. Pociask "Creation of heterojunctions in Hg1-xCdxTe (x approximately equal to 0.2) by laser annealing without melting", Proc. SPIE 2207, Laser Materials Processing: Industrial and Microelectronics Applications, (7 September 1994); https://doi.org/10.1117/12.184789
PROCEEDINGS
 4 PAGES
DOWNLOAD PDF SAVE TO MY LIBRARY
SHARE
GET CITATION
< Previous Article
|
Next Article >
Advertisement
Advertisement
KEYWORDS
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top