7 September 1994 Simulation of diffusion process in semiconductor in the presence of high-power laser beam
Author Affiliations +
Proceedings Volume 2207, Laser Materials Processing: Industrial and Microelectronics Applications; (1994) https://doi.org/10.1117/12.184752
Event: Europto High Power Lasers and Laser Applications V, 1994, Vienna, Austria
Abstract
It was demonstrated by the simulation of laser beam annealing process that one can make a great local change in concentration of impurities or intrinsic defects in a Hg1-xCdxTe crystals by long (moreover only by such) pulses of laser radiation. The diffusion processes of defects in semiconductors in the presence of high power laser beam can be described using Schottky's thermodiffusion theory. The results of calculations of time- spatial distribution of the concentration of interstitial mercury for pulse lengths 8 ns, 100 ns, and 250 microsecond(s) are presented. These computer simulated results are compared with distribution of Hg concentration in specimens subjected to laser annealing under the same condition.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marian Kuzma, Marian Kuzma, Maegorzata M. Pociask, Maegorzata M. Pociask, Eugen Sheregii, Eugen Sheregii, } "Simulation of diffusion process in semiconductor in the presence of high-power laser beam", Proc. SPIE 2207, Laser Materials Processing: Industrial and Microelectronics Applications, (7 September 1994); doi: 10.1117/12.184752; https://doi.org/10.1117/12.184752
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT


Back to Top