7 September 1994 Structural properties of Si1-xGex layers grown onto crystalline or amorphous substrates by pulsed excimer laser annealing of Ge implanted silicon
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Proceedings Volume 2207, Laser Materials Processing: Industrial and Microelectronics Applications; (1994) https://doi.org/10.1117/12.184774
Event: Europto High Power Lasers and Laser Applications V, 1994, Vienna, Austria
Abstract
In this paper, the preparation of SiGe films grown onto amorphous or single crystal substrates by pulsed excimer laser crystallization of heavily Ge implanted silicon is proposed as an alternative to classical MBE and CVD techniques. Processed films were characterized by ions (channeling-RBS) and optical (Raman) techniques.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Florence Repplinger, Florence Repplinger, Eric Fogarassy, Eric Fogarassy, Adriana Grob, Adriana Grob, Jean-Jacques Grob, Jean-Jacques Grob, Bernard Prevot, Bernard Prevot, Jean-Paul Stoquert, Jean-Paul Stoquert, Salome de Unamuno, Salome de Unamuno, } "Structural properties of Si1-xGex layers grown onto crystalline or amorphous substrates by pulsed excimer laser annealing of Ge implanted silicon", Proc. SPIE 2207, Laser Materials Processing: Industrial and Microelectronics Applications, (7 September 1994); doi: 10.1117/12.184774; https://doi.org/10.1117/12.184774
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